Cyclotron resonance in an InAs-GaSb superlattice
نویسندگان
چکیده
منابع مشابه
High performance type-I! InAs/GaSb superlattice photodiodes
We report on the demonstration of high performance p-i-n photodiodes based on type-I! InAs/GaSb superlattices operating in the very long wavelength infrared (VLWIR) range at 80 K. Material is grown by molecular beam epitaxy on GaSb substrates with excellent crystal quality as evidenced by xray diffraction and atomic force microscopy. The processed devices with a 50% cutoff wavelength of 222 tm ...
متن کاملSkin-like self-assembled monolayers on InAs/GaSb superlattice photodetectors
We report on the effects of monolayer (ML) thick skin-like octadecanethiol (ODT, CH3[CH2]17SH) on type-II InAs/GaSb MWIR photodetectors. Circumventing the ageing effects of conventional sulfur compounds, we use ODT, a self-assembling, long molecular chain headed with a sulfur atom. Photodiodes coated with and without the self-assembled monolayer (SAM) ODT were compared for their electrical and ...
متن کاملCyclotron Resonance of Itinerant Holes in Ferromagnetic InMnAs/GaSb Heterostructures
We report the first observation of hole cyclotron resonance (CR) in ferromagnetic InMnAs/GaSb heterostructures both in the high-temperature paramagnetic phase and the low-temperature ferromagnetic phase. We clearly resolve two resonances that exhibit strong temperature dependence in position, linewidth, and intensity. We attribute the two resonances to the so-called fundamental CR transitions e...
متن کاملObservation of linear and quadratic magnetic field-dependence of magneto-photocurrents in InAs/GaSb superlattice
We experimentally studied the magneto-photocurrents generated by direct interband transition in InAs/GaSb type II superlattice. By varying the magnetic field direction, we observed that an in-plane magnetic field induces a photocurrent linearly proportional to the magnetic field; however, a magnetic field tilted to the sample plane induces a photocurrent presenting quadratic magnetic field depe...
متن کاملPerformance improvement of long-wave infrared InAs/GaSb strained-layer superlattice detectors through sulfur-based passivation
We report on effective sulfur-based passivation treatments of type-II InAs/GaSb strained layer superlattice detectors (100% cut-off wavelength is 9.8 lm at 77 K). The electrical behavior of detectors passivated by electrochemical sulfur deposition (ECP) and thioacetamide (TAM) was evaluated for devices of various sizes. ECP passivated detectors with a perimeter-to-area ratio of 1600 cm 1 exhibi...
متن کاملذخیره در منابع من
با ذخیره ی این منبع در منابع من، دسترسی به آن را برای استفاده های بعدی آسان تر کنید
ژورنال
عنوان ژورنال: Solid State Communications
سال: 1979
ISSN: 0038-1098
DOI: 10.1016/0038-1098(79)90528-3